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DNB65 ISL958 A3290 03M06 1N5259B SCFR7006 B2000 ICS91
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  0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2pb709a features low current (max. 100 ma) low voltage (max. 45 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -6 v collector current (dc) i c -100 ma peak collector current i cm -200 ma peak base current i bm -100 ma total power dissipation(t amb 25 ;*) p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient r th j-a 500 k/w * transistor mounted on an fr4 pcb. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
h fe classification type 2pb709aq 2pb709ar 2PB709AS marking bq br bs electrical characteristics ta = 25 parameter symbol testconditons min max unit i e =0;v cb = -45 v -10 na ie =0;v cb =-45v;t j =150 -5 a emitter cut-off current i ebo i c =0;v eb =-5v -10 na dc current gain 2pb709aq 160 260 2pb709ar 210 340 2PB709AS 290 460 collector-emitter saturation voltage v ce(sat) i c = -100 ma; i b = -10 ma * -500 mv collector capacitance c c i e =i e =0;v cb =-10v;f=1mhz 5 pf transition frequency 2pb709aq 60 2pb709ar 70 2PB709AS 80 * pulse test: tp 300 s; ? 0.02. collector cut-off current h fe i c =-2ma;v ce =-10v f t i c =-1ma;v ce = -10 v; f = 100 mhz mhz i cbo 2pb709a product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123


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